Features: True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access Commercial: 7.5/9/12ns (max.) Low-power operation IDT70V9189LActive: 500mW (typ.)Standby: 1.5mW (typ.) Flow-Through or Pipelined output mode on either port via he FT...
40901: Features: True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access Commercial: 7.5/9/12ns (max.) Low-power operation IDT70V9189LActi...
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Symbol |
Rating |
Commercial
& Industrial |
Unit |
VTERM |
Terminal Voltage with respect to GND |
-0.5 to +4.6 |
V |
VTERM |
Terminal Voltage |
-0.5 to VCC |
V |
VTER(2) |
Temperature Under Bias |
-55 to +125 |
°C |
TSTG |
Storage Temperature |
-65 to +150
|
°C |
IOUT |
DC Output Current |
50
|
mA |
The IDT70V9189 is a high-speed 64K x 9 bit synchronous Dual- Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude of the IDT70V9189 provided by this approach allows systems to be designed with very short cycle times.
With an input data register, the IDT70V9189 has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each IDT70V9189 to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 500mW of power.