40890

Features: Counter readback on address lines Mask register readback on address lines Global Master reset for all portsDual Chip Enables on all ports for easy depth expansion Separate upper-word and lower-word controls on all ports 272-BGA package (27mm x 27mm 1.27mm ball pitch) and 256-BGA package...

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SeekIC No. : 004230318 Detail

40890: Features: Counter readback on address lines Mask register readback on address lines Global Master reset for all portsDual Chip Enables on all ports for easy depth expansion Separate upper-word and ...

floor Price/Ceiling Price

Part Number:
40890
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

Counter readback on address lines
Mask register readback on address lines
Global Master reset for all ports
Dual Chip Enables on all ports for easy depth expansion
Separate upper-word and lower-word controls on all ports
272-BGA package (27mm x 27mm 1.27mm ball pitch) and 256-BGA package (17mm x 17mm 1.0mm ball pitch)
Commercial and Industrial temperature ranges
JTAG boundary scan
MBIST (Memory Built-In Self Test) controller
True four-ported memory cells which allow simultaneous access of the same memory location
Synchronous Pipelined device
64/32K x 18 organization
Pipelined output mode allows fast 200MHz operation
High Bandwidth up to 14 Gbps (200MHz x 18 bits wide x 4 ports)
 LVTTL I/O interface
High-speed clock to data access 3.0ns (max.)
3.3V Low operating power
Interrupt flags for message passing
Width and depth expansion capabilities
Internal mask register controls counter wrap-around
Counter-Interrupt flags to indicate wrap-around



Specifications

Symbol
Rating
Commercial
& Industrial
Unit
VTERM
Terminal Voltage
with respect to GND
-0.5 to +4.6
V
VTER(2)
Terminal Voltage
-55 to +125
°C
TSTG
Temperature
Under Bias
-65 to +150
°C
IOUT
DC Output Current
50
mA

NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 150mV for more than 25% of the cycle time or 4ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 150mV. 3. Ambient Temperature under DC Bias. No AC conditions. Chip Deselected.




Description

The IDT70V5388/78 is a high-speed 64/32Kx18 bit synchronous FourPort RAM. The memory array utilizes FourPort memory cells to allow simultaneous access of any address from all four ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register and integrated burst counters, the IDT70V5388/78 has been optimized for applications having unidirectional or bi-directional data flow in bursts.

An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode.

The IDT70V5388/78 provides a wide range of functions specially designed to facilitate system operations. These include full-boundary, maskable address counters with associated interrupts for each port, mailbox interrupt flags on each port to facilitate inter-port communications, Memory Built-In Self-Test (MBIST), JTAG support and an asynchronous Master Reset to simplify device initialization. In addition, the address lines of IDT70V5388/78 have been set up as I/O pins, to permit the support of CNTRD (the ability to output the current value of the internal address counter on the address lines) and MKRD (the ability to output the current value of the counter mask register).

For specific details on the IDT70V5388/78 operation, please refer to the Functional Description and subsequent explanatory sections, beginning on page 21.




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