Features: Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port Separate byte controls for multiplexed bus and bus matching compatibility Sleep Mode Inputs on both ports Supports JTAG features compliant to IEEE 1149.1 Single 2.5V (±100mV)...
40869: Features: Full on-chip hardware support of semaphore signaling between ports Fully asynchronous operation from either port Separate byte controls for multiplexed bus and bus matching compatibility ...
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Symbol |
Rating |
Commercial
& Industrial |
Unit |
VTERM (VDD) |
VDD Terminal Voltage with Respect to GND |
-0.5 to 3.6 |
V |
VTERM(2) (VDDQ) |
VDDQ Terminal Voltage with Respect to GND |
-0.3 to VDDQ + 0.3 |
V |
VTERM(2) (INPUTS and I/O's) |
Input and I/O Terminal Voltage with Respect to GND |
-0.3 to VDDQ + 0.3
|
V |
TBIAS(3) |
Temperature Under Bias |
-55 to +125
|
°C |
TSTG |
Storage Temperature |
-45 to +150
|
°C |
TJN |
Junction Temperature |
+ 150
|
°C |
IOUT(For VDDQ = 3.3V) |
DC Output Current |
50
|
mA |
IOUT(For VDDQ = 2.5V) |
DC Output Current |
40
|
mA |
NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
The IDT70T651/9 is a high-speed 256/128K x 36 Asynchronous Dual-Port Static RAM. The IDT70T651/9 is designed to be used as a stand-alone 9216/4608K-bit Dual-Port RAM or as a combination MASTER/ SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications results in full-speed, error-free operation without the need for additional discrete logic.
This IDT70T651/9 provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by the chip enables (either CE0 or CE1) permit the on-chip circuitry of each port to enter a very low standby power mode. The 70T651/9 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controlled by the OPT pins. The power supply for the core of the IDT70T651/9 (VDD) is at 2.5V.