Features: · Low noise figure.NF = 2.0 dB typ. at f = 900 MHz· Capable of low voltage operationApplicationUHF RF amplifierPinoutSpecifications Item Symbol Ratings Unit Drain to source voltage VDS 12 V Gate 1 to source voltage VG1S ±8 V Gate 2 to source voltage VG1S ±8 V ...
3SK295: Features: · Low noise figure.NF = 2.0 dB typ. at f = 900 MHz· Capable of low voltage operationApplicationUHF RF amplifierPinoutSpecifications Item Symbol Ratings Unit Drain to source volt...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Item | Symbol | Ratings | Unit |
Drain to source voltage | VDS | 12 | V |
Gate 1 to source voltage | VG1S | ±8 | V |
Gate 2 to source voltage | VG1S | ±8 | V |
Drain current | ID | 25 | mA |
Channel power dissipation | Pch | 150 | mW |
Channel temperature | Tch | 150 | °C |
Storage temperature | Tstg | 55 to +150 | °C |