Application• Superior cross modulation performance.• Low reverse transfer capacitance: Crss = 20 fF (typ.)• Low noise figure: NF = 1.4dB (typ.)Specifications Characteristics Symbol Rating Unit Drain-source voltageGate 1-source voltageGate 2-source voltageDC drain curre...
3SK292: Application• Superior cross modulation performance.• Low reverse transfer capacitance: Crss = 20 fF (typ.)• Low noise figure: NF = 1.4dB (typ.)Specifications Characteristics ...
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Characteristics | Symbol | Rating | Unit |
Drain-source voltage Gate 1-source voltage Gate 2-source voltage DC drain current |
VDS VG1S VG2S ID |
12.5 ±8 ±8 30 |
V V V mA |
Drain power dissipation Channel temperature Storage temperature range |
PD Tch Tstg |
150 125 −55~150 |
mW |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).