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3SK226

Application·Superior cross modulation performance. ·Low reverse transfer capacitance: Crss= 0.015 pF (typ.)·Low noise figure: NF = 1.1dB (typ.) Specifications Characteristics Symbol Rating Unit Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain current Drai...

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SeekIC No. : 004230111 Detail

3SK226: Application·Superior cross modulation performance. ·Low reverse transfer capacitance: Crss= 0.015 pF (typ.)·Low noise figure: NF = 1.1dB (typ.) Specifications Characteristics Symbol Rat...

3SK226 Data Sheet

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Part Number:
3SK226
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Description



Application

·Superior cross modulation performance.  
·Low reverse transfer capacitance: Crss = 0.015 pF (typ.) 
·Low noise figure: NF = 1.1dB (typ.)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
13.5
±8
±8
30
150
125
55~125
V
V
V
mA
mW


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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