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3SK166A

Features: • Low voltage operation• Low noise: NF = 1.2dB (typ.) at 800MHz• High gain: Ga = 20dB (typ) at 800MHz• High stabilitySpecificationsDrain to Source Voltage VDSX8VGate1 to Source Voltage VG1S 6 VGate2 to Source Voltage VG2S6 VDrain Current ID80 mATotal Power Dissipa...

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SeekIC No. : 004230100 Detail

3SK166A: Features: • Low voltage operation• Low noise: NF = 1.2dB (typ.) at 800MHz• High gain: Ga = 20dB (typ) at 800MHz• High stabilitySpecificationsDrain to Source Voltage VDSX8VGat...

3SK166A Data Sheet

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Part Number:
3SK166A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability


Specifications

Drain to Source Voltage                  VDSX               8                V
Gate1 to Source Voltage                 VG1S            6                V
Gate2 to Source Voltage                 VG2S             6               V
Drain Current                                    ID                  80             mA
Total Power Dissipation                     PD                150            mW
Channel Temperature                        Tch               150            °C
Storage Temperature                         Tstg     55 to +150      °C



Description

The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching of the 3SK166A is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.


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