Features: • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (tablet) using jigs is also possible.• Employs flame-retardant epoxy resin (UL94V-0).Application...
3P4MH: Features: • This transistor features a small and lightweight package and is easy to handle even on the mounting surface due to its TO-202AA dimensions. Processing of lead wires and heatsink (t...
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Parameter | Symbol | 3P4MH | 3P6MH | Ratings | Unit |
Non-repetitive peak reverse voltage | VRSM | 500 | 700 | v | RGK = 1 k |
Non-repetitive peak off-state voltage | VDSM | 500 | 700 | v | RGK = 1 k |
Repetitive peak reverse voltage | VRRM | 400 | 600 | v | RGK = 1 k |
Repetitive peak off-voltage | VDRM | 400 | 600 | v | RGK = 1 k |
Average on-state current | I T(AV) | 3 (Tc = 87°C, Single half-wave, = 180°) | A | Refer to Figure 11. | |
Effective on-state current | I T(RMS) | 4.7 | A | - | |
Surge on-state current | ITSM | 65 (f = 50 Hz, Sine half-wave, 1 cycle) 70 (f = 60 Hz, Sine half-wave, 1 cycle) |
A | Refer to Figure 2. | |
Fusing current | it2dt | 20 (1 mst10 ms) | A2s | - | |
Critical rate of rise of on-state current | dIT/dt | 50 | A/s | - | |
Peak gate power dissipation | PGM | 2 (f50 Hz, Duty10%) | W | Refer to Figure 3. | |
Average gate power dissipation | P G(AV) | 0.2 | W | ||
Peak gate forward current | IFGM | 1 (f50 Hz, Duty10%) | A | - | |
Peak gate reverse voltage | VRGM | 6 | V | - | |
Junction temperature | Tj | −40 to +125 | °C | - | |
Storage temperature | Tstg | −55 tp +150 | °C | - |