3N163, US $ 12.28-13.28 , Vishay/Siliconix, 3N163 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158834 Detail

3N163: MOSFET 40V 5mA 375mW

3N163 Data Sheet

US $ 12.28~13.28 / Piece | Get Latest Price

Part Number:: 3N163
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

Qty
0~105
105~200
200~500

Unit Price
$13.28
$12.78
$12.28

Processing time
15 Days
15 Days
15 Days

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Upload time: 2024/12/30

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Recent History
What is this?

3N163-E3 evaluate
US $13.28 - 16.19 / Piece

MOSFET 40V 5mA 375mW
3N164 evaluate
US $12.28 - 13.28 / Piece

MOSFET 30V 3mA 375mW
3N164-E3 evaluate
US $12.28 - 13.28 / Piece

MOSFET 30V 3mA 375mW

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 70 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	- 5 mA
Resistance Drain-Source RDS (on) :	250 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-72	Packaging :	Bulk

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Resistance Drain-Source RDS (on) : 250 Ohms
Drain-Source Breakdown Voltage : - 70 V
Continuous Drain Current : - 5 mA
Package / Case : TO-72

Features:

VERY HIGH INPUT IMPEDANCE
HIGH GATE BREAKDOWN
ULTRA LOW LEAKAGE
FAST SWITCHING
LOW CAPACITANCE

Pinout

Specifications

@ 25°C (unless otherwise noted)
Drain-Source or Drain-Gate Voltage
3N163 -40V
3N164 -30V
Transient G-S Voltage (NOTE 1) ±125V
Drain Current 50mA
Storage Temperature-65°C to +200°C
Power Dissipation 375mW

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3N163

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