Features: • 4V drive.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Drain - to - Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 300 mA Drainpeak Current(Pulse) IDP PW10s, duty...
3HN04S: Features: • 4V drive.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Drain - to - Source Voltage VDSS 30 V Gate to Source Voltage VGSS ...
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Drain - to - Source Voltage |
VDSS |
30 |
V | |
Gate to Source Voltage |
VGSS |
±20 |
V | |
Drain Current (DC) |
ID |
300 |
mA | |
Drainpeak Current(Pulse) |
IDP |
PW10s, duty cycle1% |
1.2 |
A |
Allowable Power Dissipation |
PD |
When mounted on glass epoxy substrate (145mm*80mm*1.6mm) |
0.15 |
W |
Channel Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
Absolute maximum ratings | |
---|---|
VDSS [V] | 30 |
VGSS [V] | 20 |
ID [A] | 0.3 |
PD [W] | 0.15
When mounted on ceramic substrate (3000mm²*0.8mm) 1unit |
Electrical characteristics | |
---|---|
RDS(on) typ [] VGS=10V ID [A]=0.15 |
0.66 |
RDS(on) typ [] VGS=4V ID [A]=0.08 |
1.5 |
VGS(off) min [V] | 1.2 |
VGS(off) max [V] | 2.6 |
|yfs| typ [S] | 0.29 |
Ciss typ [pF] | 22 |
Qg typ [nC] | 1.68 |