3DS16-325

Features:

·Fast Access Time : 15 or 20ns
·Single 5.0 ± 0.5V Power Supply
·Power Dissipation
   - Standby              80mA
   - Operating           540mA (Max.)
·TTL Compatible Inputs and Outputs
·Fully Static Operation
   - No clock or Refresh required
·Three State Outputs
·Center Power/Ground Pin Configuration
·Die Control : CS0#, CS1#, CS2# and CS3# chip select


Pinout




Specifications

Parameter		Symbol	Rating	Unit
Voltage on Any Pin Relative to Vss		VIN. VOUT	-0.5 to +7.0	V
Voltage on Vcc Supply Relative to Vss		Vcc	-0.5 to +7.0	V
Power Dissipation		PD	2.0	W
Storage Temperature		TSTG	-65 to 150	°C
Operating Temperature	Commercial	TA	0 to 70	°C
	Industrial	TA	-40 to 85	°C

Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The 3DS16-325 is a 16,777,216 - bit high-speed Static Random Access Memory organized as 4 banks of 262,144 words of 16 bits. Two banks can operate silmultaneously, giving 32 bit processing.The 3DS16-325 uses 32 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.

Also it allows lower and upper byte access by data control (UB#, LB#). The device is manufactured using 3D PLUS well known MCM-V patended technology designed for high-speed circuit applications. It is particularly well suited for use in high-density high-speed system applications. The 3DS16-325 is packaged in a 64-pin PQFP .