Features: Noise Figure: <1.0 dB+34 dBm Output IP3Gain: 15 dBVery Stable Gain vs. Supply & TemperatureSingle Supply: +5.0 V @ 100 mA50 Ohm Matched OutputApplicationThe HMC372LP3 / HMC372LP3E is ideal for basestation receivers:• GSM, GPRS & EDGE• CDMA & W-CDMA• Priva...
372LP3E: Features: Noise Figure: <1.0 dB+34 dBm Output IP3Gain: 15 dBVery Stable Gain vs. Supply & TemperatureSingle Supply: +5.0 V @ 100 mA50 Ohm Matched OutputApplicationThe HMC372LP3 / HMC372LP3E i...
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Drain Bias Voltage (Vdd) | +8.0 Vdc |
RF Input Power (RFin)(Vs = +5.0 Vdc) | +15 dBm |
Junction Temperature | 150 |
Continuous Pdiss (T = 85) (derate 5.21 mW/ above 85) |
1.015W |
Thermal Resistance (junction to lead) |
64.1/W |
Storage Temperature | -65 to +150 |
Operating Temperature | -40 to +85 |
The HMC372LP3 & HMC372LP3E are GaAs PHEMT MMIC Low Noise Amplifi ers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifi er has been optimized to provide 1.0 dB noise fi gure, 15 dB gain and +34 dBm output IP3 from a single supply of +5.0V @ 100 mA. Input and output return losses are 25 and 14 dB respectively with the LNA requiring only four external components to optimize the RF Input match, RF ground and DC bias. The HMC372LP3 & HMC372LP3E share the same package and pinout with the HMC356LP3 high IP3 LNA. A low cost, leadless 3x3 mm (LP3) SMT QFN package houses the low noise amplifi er.