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358MS8GE

Features: Pout: +11 dBmPhase Noise: -110 dBc/Hz @100 KHzNo External Resonator NeededSingle Supply: 3V @ 100 mA15mm2 MSOP8G SMT PackageApplicationLow noise MMIC VCO w/Buffer Amplifi er for C-Band applications such as:• UNII & Pt. to Pt. Radios• 802.11a & HiperLAN WLAN• VSA...

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SeekIC No. : 004228920 Detail

358MS8GE: Features: Pout: +11 dBmPhase Noise: -110 dBc/Hz @100 KHzNo External Resonator NeededSingle Supply: 3V @ 100 mA15mm2 MSOP8G SMT PackageApplicationLow noise MMIC VCO w/Buffer Amplifi er for C-Band app...

358MS8GE Data Sheet

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Part Number:
358MS8GE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

Pout: +11 dBm
Phase Noise: -110 dBc/Hz @100 KHz
No External Resonator Needed
Single Supply: 3V @ 100 mA
15mm2 MSOP8G SMT Package


Application

Low noise MMIC VCO w/Buffer Amplifi er for C-Band applications such as:
• UNII & Pt. to Pt. Radios
• 802.11a & HiperLAN WLAN
• VSAT Radios


Pinout

Connection Diagram


Specifications

Vcc 3.5 Vdc
Storage Temperature -65 to +150
Operating Temperature -40 to +85
Operating Temperature 0 to 11V
ESD Sensitivity (HBM) Class 1A



Description

The HMC358MS8G & HMC358MS8GE are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs. The HMC358MS8G & HMC358MS8GE integrate resonators, negative resistance devices, varactor diodes, and buffer amplifi ers. The VCO's phase noise performance is excellent over temperature, shock, and process due to the oscillator's monolithic structure. Power output is 11 dBm typical from a 3.0V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance.




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