Features: ·Excellent Saturated Output Stage·Balanced Design Provides Good Output Match·26.0 dB Small Signal Gain·+24.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supp...
35.0-43.0 GHz GaAs: Features: ·Excellent Saturated Output Stage·Balanced Design Provides Good Output Match·26.0 dB Small Signal Gain·+24.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% V...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 1050 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +8.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table1 |
Channel Temperature (Tch) | MTTF Table1 |
Mimix Broadband's four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The 35.0-43.0 GHz GaAs also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This 35.0-43.0 GHz GaAs is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications