35.0-43.0 GHz GaAs

Features: ·Excellent Saturated Output Stage·Balanced Design Provides Good Output Match·26.0 dB Small Signal Gain·+24.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883·Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supp...

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35.0-43.0 GHz GaAs Picture
SeekIC No. : 004228831 Detail

35.0-43.0 GHz GaAs: Features: ·Excellent Saturated Output Stage·Balanced Design Provides Good Output Match·26.0 dB Small Signal Gain·+24.0 dBm Saturated Output Power·100% On-Wafer RF, DC and Output Power Testing·100% V...

floor Price/Ceiling Price

Part Number:
35.0-43.0 GHz GaAs
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

·Excellent Saturated Output Stage
·Balanced Design Provides Good Output Match
·26.0 dB Small Signal Gain
·+24.0 dBm Saturated Output Power
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883
·Method 2010



Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 1050 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (Pin) +8.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life



Description

Mimix Broadband's four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0 dB with a +24.0 dBm saturated output power. The 35.0-43.0 GHz GaAs also includes Lange couplers to achieve good output return loss. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This 35.0-43.0 GHz GaAs is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications




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