Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 30V
Diode Type: Schottky
Reverse Recovery Time (trr): -
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (SMD-220)
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 15A
Current - Reverse Leakage @ Vr: 1.75mA @ 30V
Features: `150 TJ operation
`High purity, high temperature epoxy encapsulation for
`enhanced mechanical strength and moisture resistance
`Low forward voltage drop
`High frequency operation
`Guard ring for enhanced ruggedness and long term reliability
`Lead-Free ("PbF" suffix)Specifications
| Parameters |
32CTQ |
Units |
Conditions |
IF(AV) Max. Average Forward Current
* See Fig. 5 |
30 |
A |
50% duty cycle @ TC = 115, rectangular wave form |
IF(AV) Max. Average Forward Current
* See Fig. 5 |
900 |
A |
5s Sine or 3s Rect. pulse |
Following any rated
load condition and
with rated VRRM applied |
| 250 |
10ms Sine or 6ms Rect. pulse |
| EAS Non-Repetitive Avalanche Energy |
13 |
mJ |
TJ = 25, IAS = 1.20 Amps, L = 11.10 mH |
| IAR Repetitive Avalanche Current |
3 |
A |
Current decaying linearly to zero in 1 sec
Frequency limited by TJ max. VA = 1.5 x VR typical |
DescriptionThe 32CTQ030SPbF Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
32CTQ030SPBF Data Sheet
