Series: -
Manufacturer: Vishay Semiconductors
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Reverse Recovery Time (trr): -
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Packaging: Bulk
Current - Average Rectified (Io) (per Diode): 150A
Current - Reverse Leakage @ Vr: 10mA @ 30V
Voltage - DC Reverse (Vr) (Max): 30V
Supplier Device Package: TO-249AA
Package / Case: TO-249AA (Modified), D-60
Voltage - Forward (Vf) (Max) @ If: 560mV @ 150A
Features: 150 °C TJ operation
High Surge Capability
Center tap module
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
Low profile, high current packageSpecifications
|
Parameters |
322CNQ |
Units |
Conditions |
|
IF(AV) Max. Average Forward Current
(Per Leg) |
300 |
A
A |
50% duty cycle @ TC = 87 °C, rectangular wave form |
|
150 |
|
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current (Per Leg) |
10,000 |
A
|
5s Sine or 3s Rect. pulse |
Following any rated
oad condition and with
ated VRRM applied
|
|
1500 |
5s Sine or 3s Rect. pulse |
|
EAS Non-Repetitive Avalanche Energy
(Per Leg) |
270 |
mJ |
TJ = 25 °C, IA = 1 Amps, LS = 30 mH
|
|
I Repetitive Avalanche Current
AR (Per Leg) |
60 |
A |
Current decaying linearly to zero in 1 sec
Frequency limited by TJmax. VA = 1.5 x VR typical |
DescriptionThe 322CNQ030 isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150° C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
322CNQ030 Data Sheet
