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3134-100

SpecificationsMaximum Power DissipationDevice Dissipation @ 251.......... 570 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)...... 65 VEmitter to Base Voltage (BVebo)...... 3.0 VCollector Current (Ic) ............17 AMaximum TemperaturesStorage Temperature ......-65 to +200Operating...

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3134-100: SpecificationsMaximum Power DissipationDevice Dissipation @ 251.......... 570 WMaximum Voltage and CurrentCollector to Base Voltage (BVces)...... 65 VEmitter to Base Voltage (BVebo)...... 3.0 VColle...

3134-100 Data Sheet

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Part Number:
3134-100
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Specifications

Maximum Power Dissipation
Device Dissipation @ 251.......... 570 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)...... 65 V
Emitter to Base Voltage (BVebo)...... 3.0 V
Collector Current (Ic) ............17 A
Maximum Temperatures
Storage Temperature ......-65 to +200
Operating Junction Temperature.... +200


Description

The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100õs pulse width, 10% duty factor across the 3100 to 3400 MHz band. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness.




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