30N06

Features: SpecificationsDescription The UTC 30N06 is a low voltage MOSFET which is designed to have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and excellent avalanche characteristics. This power MOSFET has great effect at automotive applications in...

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SeekIC No. : 004227560 Detail

30N06: Features: SpecificationsDescription The UTC 30N06 is a low voltage MOSFET which is designed to have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and e...

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Part Number:
30N06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/14

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Product Details

Description



Features:






Specifications






Description

      The UTC 30N06 is a low voltage MOSFET which is designed to have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and excellent avalanche characteristics. This power MOSFET has great effect at automotive applications in power supplies, high efficient DC to DC converters and battery operated products.

      Here you can get some information about its features.30N06 has six features as follows.The first one is that RDS(ON) is 40m@VGS is 10 V.The second one is that it has ultra low gate charge ( typical 20 nC ).The third one is that it has low reverse transfer capacitance (CRSS = typical 80 pF ).The fourth is that it has fast switching capability.
The fifth one is that it has 100% avalanche energy specified.The sixth one is that it has improved dv/dt capability.

      The following is the absolute maximum ratings of 30N06.There are eleven absolute maximum ratings as follows.The first one is that the drain-source voltage is 60V.The second one is that the gate to source voltage is ±20V.The third one is that the continuous drain current is 30A when TC = 25 but 21.3A when TC = 100.The fouth one is that the pulsed drain current is 120A.The fifth one is that the avalanche energy at single pulsed is 300mJ.The sixth one is that the repetitive avalanche energy is 8mJ.The seventh one is that the peak diode recovery  is 7.5 V/ns.The eighth one is that the total power dissipation (TC = 25) is 80W.The ninth one is that the derating factor above 25 is 0.53W/.The tenth one is that the operation junction temperature ranges from -55 to +150.The last one is that the storage temperature is from -55 to + 150.

      There is not much information about the 30N06.If you want to get more information,please pay attention to our website,we will update timely.






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