30CTH02PBF

Manufacturer: Vishay Semiconductors
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: 1 Pair Common Cathode
Series: FRED Pt™
Voltage - DC Reverse (Vr) (Max): 200V
Reverse Recovery Time (trr): 35ns
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 15A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
Current - Reverse Leakage @ Vr: 10µA @ 200V


Features:






Specifications






Description

      The planar structure and the platinum doped life time control,guarantee the best overall performance, ruggedness and reliability characteristics.The 30CTH02PbF are intended for use in the output rectification stage of SMPS,UPS,DC-DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives.Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
      The 30CTH02PbF have five features.The first one is that it is designed with hyperfast recovery time.The sencond one is about low forward voltage drop.The third one is about low leakage current.The fourth one is that the 30CTH02PbF allows for reliable operation up to 175 junction temperature.The last one is about lead-free("PbF" suffix).
      The 30CTH02PbF have some absolute maximum ratings.The maximum of VRRM which means peak repetitive reverse voltage is 200V.The maximum of IF(AV) which means average rectified forward current is 15A per diode at Tc=159 or Tc=125(fullpack) and 30A per device.The maximum of IFSM which means non repetitive peak surge current is 200A at Tj=25.The maximum of Tj,TSTG which means operating junction and storage temperatures is from -65 to 175.
      The following is about its thermal-mechanical characteristics.The maximum of Tj which means junction temperature is 175.The typical of Tstg which means storage temperature is 175.The maximum of RthJC which means thermal resistance and junction to case per diode is 1.1 /W and 3.5/W(fullpack).