2STR2160

Transistors Bipolar (BJT) LOW VOLTAGE FAST SWITCHING PNP POWER

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2STR2160 Picture
SeekIC No. : 00208986 Detail

2STR2160: Transistors Bipolar (BJT) LOW VOLTAGE FAST SWITCHING PNP POWER

floor Price/Ceiling Price

US $ .07~.08 / Piece | Get Latest Price
Part Number:
2STR2160
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~4300
  • 4300~6000
  • 6000~12000
  • Unit Price
  • $.08
  • $.08
  • $.07
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Quick Details

Packaging : Reel    

Description

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

Very low collector-emitter saturation voltage
High current gain characteristic
Fast switching speed
Miniature SOT-23 plastic package for surface mounting circuits



Application

LED
Battery charger
Motor and relay driver
Voltage regulation



Specifications

SYMBOL PARAMETER CONDITIONS Rating Unit
VCBO Collector-base voltage (IE= 0) Open emitter -60 V
VCEO Collector-emitter voltage (IB = 0) Open collector -60 V
VEBO Emitter-base voltage (IC = 0)   -5  
IC Collector current   -1 A
ICM Collector current-peak   -2 A
Ptot Total dissipation at Tamb = 25 TC=25

0.5

W
Tj Junction temperature   150
Tstg Storage temperature   -65 to 150



Description

The 2STR2160 in a PNP transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STR1160.




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