Transistors Bipolar (BJT) Power Bipolar Transistors
2STN2540: Transistors Bipolar (BJT) Power Bipolar Transistors
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 5 A | ||
DC Collector/Base Gain hfe Min : | 50 | Configuration : | Single Dual Collector | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter |
Value |
Unit |
VCBO |
Collector-base voltage (IE = 0) |
-40 |
V |
VCEO |
Collector-emitter voltage (IB = 0) |
-40 |
V |
VEBO |
Emitter-base voltage (IC = 0) |
-6 |
V |
IC |
Collector current |
-5 |
A |
ICM |
Collector peak current (tP < 5ms) |
-10 |
A |
IBM |
Base peak current (tP < 5ms) |
-2 |
|
Ptot |
Total dissipation at Tamb = 25 |
1.6 |
W |
Tstg |
Storage temperature |
-65 to 150 |
|
TJ |
Max. operating junction temperature |
150 |
The 2STN2540 is a PNP transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Technical/Catalog Information | 2STN2540 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 5A |
Power - Max | 1.6W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5A, 2V |
Vce Saturation (Max) @ Ib, Ic | 200mV @ 200mA, 2A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
Packaging | Digi-Reel? |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2STN2540 2STN2540 497 5901 6 ND 49759016ND 497-5901-6 |