Transistors Bipolar (BJT) Lo Vltg fast switch pnp Pwr transistor
2STF2360: Transistors Bipolar (BJT) Lo Vltg fast switch pnp Pwr transistor
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 80 at 100 mA at 2 V | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 130 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
Packaging : | Reel |
Symbol |
Parameter |
Value |
Unit | |
2STF2360 |
2STN2360 | |||
SOT-89 |
SOT-223 | |||
VCBO |
Collector-Base Voltage (IE= 0) |
-60 |
V | |
VCEO |
Collector-Emitter Voltage (IB=0) |
-60 |
V | |
VEBO |
Emitter-Base Voltage (IC= 0) |
-6 |
V | |
IC |
Collector Current |
-3 |
A | |
ICM |
Collector Peak Current (tP<5ms) |
-5 |
A | |
IB |
Base Current |
-0.2 |
A | |
IBM |
Base Peak Current (tP < 5ms) |
-0.4 |
A | |
PTOT |
Total dissipation at Tamb = 25 |
1.4 |
1.6 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
||
TJ |
Max. Operating Junction Temperature |
150 |
The 2STF2360 and 2STN2360 are PNP transistors manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Technical/Catalog Information | 2STF2360 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 1.4W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 1A, 2V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 150mA, 3A |
Frequency - Transition | 130MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-89-3, TO-243-3 |
Packaging | Digi-Reel? |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2STF2360 2STF2360 497 6004 6 ND 49760046ND 497-6004-6 |