Transistors Bipolar (BJT) PWR BIP/S.SIGNAL
2STF2340: Transistors Bipolar (BJT) PWR BIP/S.SIGNAL
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 280 at 0.1 A at 2 V | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-89 |
Packaging : | Reel |
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-base voltage (IE = 0) | -40 | V |
VCEO | Collector-emitter voltage (IB = 0) | -40 | V |
VEBO | Emitter-base voltage (IC = 0) |
-5 |
V |
IC | Collector current | -3 | A |
ICM | Collector peak current (tP < 5ms) | -6 | A |
PTOT | Total dissipation at Tc = 25 | 1.4 | W |
Tstg | Storage temperature | -65 to 150 | |
TJ | Max. operating junction temperature | 150 |
The 2STF2340 in a PNP transistor manufactured using new "PB-HDC" (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STF1340.
Technical/Catalog Information | 2STF2340 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 3A |
Power - Max | 1.4W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 3A, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 150mA, 3A |
Frequency - Transition | 100MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-89-3, TO-243-3 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2STF2340 2STF2340 497 7061 2 ND 49770612ND 497-7061-2 |