Features: Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package in tube (suffix -1 ) Surface mounting DPAK (TO-252) power package in tape & reel (suffix T4 )Application Ccfl drivers Voltage regulators R...
2STD1665: Features: Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package in tube (suffix -1 ) Surface mounting DPAK...
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Transistors Bipolar (BJT) Lo Vltg fast switch pnp Pwr transistor
Symbol | Parameter | Value | Unit |
VCBO | Collector-base voltage (IE = 0) | 150 | V |
VCEO | Collector-emitter voltage (IB = 0) | 65 | V |
VEBO | Emitter-base voltage (IC = 0) | 7 | V |
IC | Collector current | 6 | A |
ICM | Collector peak current (tP < 5ms) | 20 | A |
IB | Base current | 1 | A |
Ptot | Total dissipation at Tc = 25 | 15 | W |
Tstg | Storage temperature | -65 to 150 | |
TJ | Max. operating junction temperature | 150 |
The 2STD1665 is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.