2STA1962

Mounting Style :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 5 V
Packaging : Tube
Maximum DC Collector Current : 15 A
Collector- Emitter Voltage VCEO Max : 230 V
Maximum Operating Frequency : 30 MHz
DC Collector/Base Gain hfe Min : 80
Package / Case : TO-3P


Features:

·High breakdown voltage VCEO = -230 V
·Complementary to 2STC5242
·Fast-switching speed
·Typical fT = 30 MHz


Application

· Audio power amplifier


Specifications

SYMBOL	PARAMETER	RATING	UNIT
VCBO	Collector to base voltage(IE = 0)	-230	V
VCEO	Collector to emitter voltage(IB = 0)	-230	V
VEBO	Emitter to base voltage(IC = 0)	-5	V
IC	Collector current	-15	A
ICM	Collector peak current	-30	A
Ptot	Collector dissipationTC = 25	150	W
Tj	Junction temperature	150
Tstg	Storage temperaturerange	-55 to +150

Description

This 2STA1962 is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Parameters:

Technical/Catalog Information	2STA1962
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	15A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	3V @ 800mA, 8A
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-3P
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2STA1962 2STA1962 497 7056 5 ND 49770565ND 497-7056-5