2SK962-01

The 2SK962-01 is an n-channel silicon power mos-fet.Features of the 2SK962-01 are:(1)high speed switching; (2)low on-resistance; (3)no secondary breakdown; (4)low driving power; (5)high voltage; (6)VGSS=±30V guarantee; (7)avalanche-proof.

The absolute maximum ratings of the 2SK962-01 can be summarized as:(1)drain-source voltage:900V; (2)continuous drain current:8A; (3)pulsed drain current:23A; (4)continous reverse drain current:8A; (5)gate-source peak voltage:±30V; (6)Max.power dissipation:150W; (7)operating and storage temperature range:150(Tch);-55~150(Tstg).

The electrical characteristics at TA=25°C of the 2SK962-01 can be summarized as:(1)drain-source breakdown voltage:900V; (2)gate threshold voltage:2.5~5.0V; (3)zero gate voltage drain current:500A(Tch=25);1.0mA(Tch=125); (4)gate-source on-state resistance:100nA; (5)drain-source on-state resistance:2.0; (6)forward transconductance:3.0S; (7)input capacitance:2100pF; (8)output capacitance:300pF; (9)reverse transfer capacitance:160pF; (10)turn-on time ton:75ns; (11)(ton+td(on)+tr):350ns; (12)turn-off time toff :450ns; (13)(td(off)+tf):240ns; (14)diode forward on-voltage:1.5V; (15)reverse recovery time:1000ns.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .