Features: • Compact package• High forward transfer admittance | yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A)• Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)• Includes diode and high resistance at G - SSpecificationsDrain to Source Voltage Note ...VDSX.. 20 ......
2SK660: Features: • Compact package• High forward transfer admittance | yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A)• Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz)• In...
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Drain to Source Voltage Note ...VDSX.. 20 .....V
Gate to Drain Voltage ......VGDO .20 .....V
Drain Current ...........ID ...10 .....mA
Gate Current ...........IG... 10 .....mA
Total Power Dissipation ......PT ..100 .....mW
Junction Temperature....... Tj ...125 ....°C
Storage Temperature ......Tstg ..55 to +125.°C
The 2SK660 is suitable for converter of ECM.