2SK659

The 2SK659 is N-channel MOS field effect power transistor designed for solenoid,motor and lamp driver.The 2SK659 has 3 features.The first one is 4V gate drive-logic level.The second one is low RDS(on).The third one is no secondary breakdown.

The 2SK659 has some absolute maximum ratings.The maximum temperatures:Storage temperature is -55 to +150.Channel temperature is 150 maximum.Maximum power dissipation:Total power dissipation (Ta=25) is 2.0 W.Total power dissipation (Tc=25) is 35 W.Maximum voltage and currents (Ta=25):VDSS drain to source voltage is 60 V.VGSS gate to source voltage is ±20 V.ID(DC) drain current (DC) is ±12 A.ID(pulse) drain current (pulse) is ±60 A.

The 2SK659 has some electrical characterics (Ta=25).When the symbol is RDS(on),the characteristic is drain to source on-state,the max is 0.075,the unit is ,the test conditions is VGS=10V,ID=6A.When the symbol is RDS(on),the characteristic is drain to source on-state,the max is 0.095,the unit is ,the test conditions is VGS=4V,ID=6A.When the symbol is VGS(off),the characteristic is gate to source cutoff voltage,the min is 1,the max is 2.5,the unit is V,the test conditions is VDS=10V,ID=1mA.When the symbol is yfs,the characteristic is forward transfer current,the min is 5,the unit is s,the test conditions is VDS=10V,ID=6A.When the symbol is IDSS,the characteristic is drain leakage current,the max is 10,the unit is A,the test conditions is VDS=10V,VGS=0.When the symbol is IGSS,the characteristic is gate to source leakage current,the max is  ±100,the unit is nA,the test conditions is VDS= ±20V,VGS=0. 

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