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2SK3994

Features: Application`􀁺 Low drain−source ON-resistance : RDS (ON) = 90 m (typ.)`􀁺 High forward transfer admittance : |Yfs| = 10 S (typ.)`􀁺 Low leakage current : IDSS = 100 A (max) (VDS = 250 V)`􀁺 Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA...

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SeekIC No. : 004226989 Detail

2SK3994: Features: Application`􀁺 Low drain−source ON-resistance : RDS (ON) = 90 m (typ.)`􀁺 High forward transfer admittance : |Yfs| = 10 S (typ.)`􀁺 Low leakage current : IDSS...

2SK3994 Data Sheet

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Part Number:
2SK3994
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:






Application

`􀁺 Low drain−source ON-resistance : RDS (ON) = 90 m (typ.)
`􀁺 High forward transfer admittance : |Yfs| = 10 S (typ.)
`􀁺 Low leakage current : IDSS = 100 A (max) (VDS = 250 V)
`􀁺 Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Rating Unit
Drainsource voltage VDSS 250 V
Draingate voltage (RGS = 20 k) VDGR 250 V
Gatesource voltage VGSS ±30 V
Drain current DC (Note 1) ID 20 A
Pulse (Note 1) IDP 80 A
Drain power dissipation (Tc = 25) PD 45 W
Single-pulse avalanche energy
(Note 2)		 EAS 487 mJ
Avalanche current IAR 20 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






Description






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