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2SK3993

Features: Low on-state resistance RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 32 A)Low Ciss: Ciss = 4770 pF TYP.5 V drive availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ...

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SeekIC No. : 004226987 Detail

2SK3993: Features: Low on-state resistance RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 32 A)Low Ciss: Ciss = 4770 pF TYP.5 V drive availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 2...

2SK3993 Data Sheet

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Part Number:
2SK3993
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Low on-state resistance RDS(on)1 = 3.8 mΩ MAX. (VGS = 10 V, ID = 32 A)
Low Ciss: Ciss = 4770 pF TYP.
5 V drive available


Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 25 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±64 A
Drain Current (pulse) Note1 ID(pulse) ±256 A
Total Power Dissipation (TC = 25°C) PT1 40 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 41 A
Single Avalanche Energy Note2 EAS 168 mJ



Description

The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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