Features: • Low on-state resistance RDS(on)1 = 3.8 m MAX. (VGS = 10 V, ID = 32 A)• Low Ciss: Ciss = 4770 pF TYP.• 5 V drive availableSpecificationsDrain to Source Voltage (VGS = 0 V) VDSS25 VGate to Source Voltage (VDS = 0 V)VGSS±20VDrain Current (DC) (TC = 25) ID(DC) ±64 ADrain...
2SK3993-ZK: Features: • Low on-state resistance RDS(on)1 = 3.8 m MAX. (VGS = 10 V, ID = 32 A)• Low Ciss: Ciss = 4770 pF TYP.• 5 V drive availableSpecificationsDrain to Source Voltage (VGS = 0 ...
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The 2SK3993 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.