2SK3991

Features: • Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A)• Low C iss: C iss = 830 pF TYP.• 5 V drive availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (T...

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SeekIC No. : 004226985 Detail

2SK3991: Features: • Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A)• Low C iss: C iss = 830 pF TYP.• 5 V drive availableSpecifications Drain to Source Voltage (...

floor Price/Ceiling Price

Part Number:
2SK3991
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/2

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Product Details

Description



Features:

• Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A)
• Low C iss: C iss = 830 pF TYP.
• 5 V drive available




Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 25 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25)
ID(DC)
±30 A

Drain Current (Pulse)Note1

ID(pulse) ±120 A

Total Power Dissipation (Tc = 25)

PT1 21 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +150
Single Avalanche Current Note2 IAS 15 A
Single Avalanche Energy Note2 EAR 22.5 mJ



Description

The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.




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