Features: • Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A)• Low C iss: C iss = 830 pF TYP.• 5 V drive availableSpecifications Drain to Source Voltage (VGS = 0 V) VDSS 25 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (T...
2SK3991: Features: • Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A)• Low C iss: C iss = 830 pF TYP.• 5 V drive availableSpecifications Drain to Source Voltage (...
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• Low on-state resistance RDS(on)1 = 13.0 m MAX. (VGS = 10 V, ID = 15 A)
• Low C iss: C iss = 830 pF TYP.
• 5 V drive available
Drain to Source Voltage (VGS = 0 V) | VDSS | 25 | V |
Gate to Source Voltage (VDS = 0 V) | VGSS | ±20 | V |
Drain Current (DC) (TC = 25) | ID(DC) |
±30 | A |
Drain Current (Pulse)Note1 |
ID(pulse) | ±120 | A |
Total Power Dissipation (Tc = 25) |
PT1 | 21 | W |
Total Power Dissipation | PT2 | 1.0 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55 to +150 | |
Single Avalanche Current Note2 | IAS | 15 | A |
Single Avalanche Energy Note2 | EAR | 22.5 | mJ |
The 2SK3991 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.