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2SK3943

Features: • Super low on-state resistance RDS(on)1 = 3.5 m MAX. (VGS = 10 V, ID = 41 A)• Low Ciss: Ciss = 5800 pF TYP.Specifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25) ID(DC) ±80 A...

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SeekIC No. : 004226968 Detail

2SK3943: Features: • Super low on-state resistance RDS(on)1 = 3.5 m MAX. (VGS = 10 V, ID = 41 A)• Low Ciss: Ciss = 5800 pF TYP.Specifications Drain to Source Voltage (VGS = 0 V) VDSS 40 V...

2SK3943 Data Sheet

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Part Number:
2SK3943
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance RDS(on)1 = 3.5 m MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 5800 pF TYP.




Specifications

Drain to Source Voltage (VGS = 0 V) VDSS 40 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25)
ID(DC)		 ±80 A

Drain Current (Pulse)Note1

 ID(pulse) ±328 A

Total Power Dissipation (Tc = 25)

 PT1 104 W
Total Power Dissipation (TA= 25) PT2 1.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +150
Single Avalanche Energy Note2 EAS 185 mJ
Repetitive Avalanche Current Note3 IAR 43 A
Repetitive Avalanche Energy Note3 EAR 185 mJ



Description

The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications.




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