Features: Application` Low drain-source ON resistance : RDS (ON) = 0.18 (typ.)` High forward transfer admittance : |Yfs| = 10 S (typ.)` Low leakage current : IDSS = 100 A (max) (VDS = 450 V)` Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)Spe...
2SK3935: Features: Application` Low drain-source ON resistance : RDS (ON) = 0.18 (typ.)` High forward transfer admittance : |Yfs| = 10 S (typ.)` Low leakage current : IDSS = 100...
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Characteristic | Symbol | Rating | Unit | |
Drainsource voltage | VDSS | 450 | V | |
Draingate voltage (RGS = 20 k) | VDGR | 450 | V | |
Gatesource voltage | VGSS | ±30 | V | |
Drain current | DC (Note 1) | ID | 17 | A |
Pulse (Note 1) | IDP | 68 | A | |
Drain power dissipation (Tc = 25) | PD | 50 | W | |
Single-pulse avalanche energy (Note 2) |
EAS | 918 | mJ | |
Avalanche current | IAR | 17 | A | |
Repetitive avalanche energy (Note 3) | EAR | 5 | mJ | |
Channel temperature | Tch | 150 | ||
Storage temperature range | Tstg | −55~150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).