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2SK3911

Features: Application• Small gate charge: Qg = 60 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 0.22 (typ.)• High forward transfer admittance: |Yfs| = 11 S (typ.)• Low leakage current: IDSS = 500 A (VDS = 600 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V,...

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2SK3911: Features: Application• Small gate charge: Qg = 60 nC (typ.)• Low drain-source ON resistance: RDS (ON) = 0.22 (typ.)• High forward transfer admittance: |Yfs| = 11 S (typ.)• Lo...

2SK3911 Data Sheet

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Part Number:
2SK3911
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:






Application

• Small gate charge: Qg = 60 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 0.22 (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 500 A (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Rating Unit
Drainsource voltage VDSS 600 V
Draingate voltage (RGS = 20 k) VDGR 600 V
Gatesource voltage VGSS ±30 V
Drain current DC (Note 1) ID 20 A
Pulse (Note 1) IDP 80 A
Drain power dissipation (Tc = 25) PD 150 W
Single-pulse avalanche energy
(Note 2)		 EAS 792 mJ
Avalanche current IAR 20 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






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