2SK3905

Features: SpecificationsDescription The 2SK3905 is a kind of product with general-Purpose Switching Device Applications. it has 4 features: 1.Low drain-source ON resistance: RDS (ON) = 0.25 (typ.); 2.High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.); 3.Low leakage current: IDSS =...

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SeekIC No. : 004226938 Detail

2SK3905: Features: SpecificationsDescription The 2SK3905 is a kind of product with general-Purpose Switching Device Applications. it has 4 features: 1.Low drain-source ON resistance: RDS (ON) = 0.25 (typ.);...

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Part Number:
2SK3905
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/2

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Product Details

Description



Features:






Specifications






Description

      The 2SK3905 is a kind of product with general-Purpose Switching Device Applications. it has 4 features: 1.Low drain-source ON resistance: RDS (ON) = 0.25 (typ.); 2.High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.); 3.Low leakage current: IDSS = 100 A (max) (VDS = 500 V); 4.Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).
      Here are some Absolute Maximum Ratings of the 2SK3905 when Ta = 25°C: 1. Drain-to-Source Voltage is 500 V; 2.Drain-gate voltage (RGS = 20 k) is 500 V; 3.Gate-source voltage is ±30V; 4.Drain Current (DC) is 17A, Drain current(Pulse) is 68A; 5.Drain power dissipation (Tc = 25°C) is 150 W; 6.Single pulse avalanche energy is 816MJ; 7.Avalanche current is 17 A; 8.Repetitive avalanche energy is 15mJ; 9.Channel temperature is 150 °C; 10. Storage temperature range is from -55 to 150 °C.
      When Ta = 25°C, the Electrical Characteristics of 2SK3905 are as following mentioned:1.when ID=1mA, VGS=0, Drain-to-Source Breakdown Voltage is at least 500V; 2.when VGS = ±25 V, VDS = 0 V, Gate leakage current is ±10 A; 3.when VDS = 500 V, VGS = 0 V, Drain cutoff current is at most 100A; 4.when IG = ±10 A, VDS = 0 V, Drain-source breakdown voltage is ±30V; 5.when VDS = 10 V, ID = 1 mA, Gate threshold voltage is from 2.0 to 4.0V; 6.when VGS = 10 V, ID = 8.5 A, Drain-source ON resistance is 0.25 to 0.31; 7.when VDS = 10 V, ID = 8.5 A, Forward transfer admittance is from 2.3 to 8.2S; 8.when VDD =400 V, VGS = 10 V, ID = 17 A, Total gate charge is 62nC, Gate-source charge is 40nC, Gate-drain ("Miller") charge is 22nC.
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