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2SK3901

Features: • Super low On-state resistance RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 m MAX. (VGS = 4.5 V, ID = 30 A)• Low C iss: C iss = 1950 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source vo...

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SeekIC No. : 004226934 Detail

2SK3901: Features: • Super low On-state resistance RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 16.5 m MAX. (VGS = 4.5 V, ID = 30 A)• Low C iss: C iss = 1950 pF TYP.• Built-in ga...

2SK3901 Data Sheet

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Part Number:
2SK3901
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low On-state resistance
   RDS(on)1 = 13 m MAX. (VGS = 10 V, ID = 30 A)
   RDS(on)2 = 16.5 m MAX. (VGS = 4.5 V, ID = 30 A)
• Low C iss: C iss = 1950 pF TYP.
• Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage(VGS = 0 V)
VDSS
60
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)(TC = 25°C)
ID
±60
A
Drain peak current(Pulse)1
ID(pulse)
±150
A
Total Power Dissipation (TC = 25°C)
PT1
64
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single Avalanche Energy 2
EAS
68
mJ
Repetitive Avalanche Current 3
IAR
26
A
Repetitive Avalanche Energy 3
EAR
68
mJ
Notes 1. PW 10 s, Duty Cycle 1%
          2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H
          3. RG = 25 , Tch(peak) 150°C


Description

The 2SK3901 is N-channel MOS Field Effect Transistor designed for high current switching applications


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