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2SK3900

Features: • Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A)• Low C iss: C iss = 3500 pF TYP.• Built-in gate protection diodeSpecifications PARAMETER SYMBOL RATING UNIT Drain to source vol...

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SeekIC No. : 004226933 Detail

2SK3900: Features: • Super low on-state resistance RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A)• Low C iss: C iss = 3500 pF TYP.• Built-in gat...

2SK3900 Data Sheet

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Part Number:
2SK3900
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance
   RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 41 A)
   RDS(on)2 = 10 m MAX. (VGS = 4.5 V, ID = 41 A)
• Low C iss: C iss = 3500 pF TYP.
• Built-in gate protection diode


Specifications

PARAMETER
SYMBOL
RATING

UNIT

Drain to source voltage (VGS = 0 V)
VDSS
60
V
Gate to source voltage(VDS = 0 V)
VGSS
±20
V
Drain current(DC)
ID(DC)
±82
A
Drain peak current(Pulse)1
ID(pulse)
±246
A
Total Power Dissipation (TC = 25°C)
PT1
104
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
Single avalanche energy 2
EAS
141
mJ
Single avalanche energy 2
IAR
37.5
A
Repetitive avalanche energy 3
EAR
141
mJ
Notes 1. PW 10 s, Duty Cycle 1%
           2. Starting Tch = 25°C, VDD = 30 V, RG = 25 , VGS = 20 0 V, L = 100 H
           3. RG = 25 , Tch(peak) 150°C


Description

The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications.


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