2SK389

Features: SpecificationsDescription2SK389 is the TOSHIBA dual field effect transistor silicon monolithic N channel junction type and has the low noise audio as well as differential amplifier applications. 2SK389 has many unique features: The first one is one chip dual type. The second one is it is...

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SeekIC No. : 004226931 Detail

2SK389: Features: SpecificationsDescription2SK389 is the TOSHIBA dual field effect transistor silicon monolithic N channel junction type and has the low noise audio as well as differential amplifier applica...

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Part Number:
2SK389
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:






Specifications






Description

2SK389 is the  TOSHIBA dual field effect transistor silicon monolithic N channel junction type and has the low noise audio as well as differential amplifier applications. 2SK389 has many unique features: The first one is one chip dual type. The second one is it is recommended for first differential stages of DC amplifiers. The third one is good pair characteristics. The forth one is high breakdown voltage. The fifth one is very low noise. The sixth one is high input impedance.The seventh one is complementary to 2SJ109.

There are some maximum ratings about 2SK389. Gate-drain voltage(VGDS) is -50 V. Gate current(IG) is 10 mA.Drain power dissipation(PD) is 200 mW. Junction temperature (Tj) is 125.Storage temperature range(Tstg) is -55 to 125.Otherwise,there are also some electrical charactersitcs about it when Ta is 25.Gate cut-off current(IGSS) is -1.0 nA max when VGS is -30 V and VDS is 0. Gate-drain breakdown voltage(V(BR)GDS) is -50 V min when VDS is 0 and IG is -100 uA.Drain current(IDSS) is 2.6 mA min and 20 mA max when VDS is 10 V and VGS is 0 V .Drain current ratio(IDSS/IDSS) is 0.9 min when VDS is 10 V and VGS is 0.Gate-source cut-off voltage(VGS(OFF)) is -0.15 V min and -2.0 V max when VDS is 10 V and ID is 0.1 uA.Forward transfer admittance is 8 mS min and 20 mS typ when VDS is 10 V , VGS is 0 , f is 1 kHz, IDSS is 3 mA.Forward transfer admittance ratio is 0.9 min when VDS is 10 V , VGS is 0 and f is 1 kHz.Differential gate-source voltage is 20 mV max when VDS is 10 V and ID is 1 mA.

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