MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 720V
2SK3878(F,T): MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 720V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 900 V | ||
Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 1 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | SC-65 | Packaging : | Tube |