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2SK3878(F)

MOSFET N-CH 900V 9A TO-3PN

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SeekIC No. : 003431943 Detail

2SK3878(F): MOSFET N-CH 900V 9A TO-3PN

2SK3878(F) Data Sheet

floor Price/Ceiling Price

US $ 1.73~1.73 / Piece | Get Latest Price
Part Number:
2SK3878(F)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~100
  • Unit Price
  • $1.73
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Drain to Source Voltage (Vdss): 900V Continuous Drain Current : 2.1 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 9A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2200pF @ 25V
Power - Max: 150W Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 9A
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Power - Max: 150W
Drain to Source Voltage (Vdss): 900V
Packaging: Bulk
Input Capacitance (Ciss) @ Vds: 2200pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-3P-3, SC-65-3
Manufacturer: Toshiba
Supplier Device Package: TO-3P(N)
Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4A, 10V


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