2SK3863

Features: Application• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)• High forward transfer admittance: |Yfs| = 2.8S (typ.)• Low leakage current: IDSS = 100 A (VDS = 500 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristic S...

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SeekIC No. : 004226921 Detail

2SK3863: Features: Application• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)• High forward transfer admittance: |Yfs| = 2.8S (typ.)• Low leakage current: IDSS = 100 A (VDS = 500 V...

floor Price/Ceiling Price

Part Number:
2SK3863
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:






Application

• Low drain-source ON resistance: RDS (ON) = 1.35 (typ.)
• High forward transfer admittance: |Yfs| = 2.8S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 500 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)



Specifications

Characteristic Symbol Rating Unit
Drainsource voltage VDSS 500 V
Draingate voltage (RGS = 20 k) VDGR 500 V
Gatesource voltage VGSS ±30 V
Drain current DC (Note 1) ID 5 A
Pulse (t = 1 ms)
(Note 1)
IDP 20 A
Drain power dissipation (Tc = 25) PD 40 W
Single-pulse avalanche energy
(Note 2)
EAS 180 mJ
Avalanche current IAR 5 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the ignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).






Description






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