Features: • Application for Ultra-compact ECMSpecifications Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25) PD 100 mW Junction Temperature Tj 125 Storage temperature range Tstg −55~125 Note: Using continuo...
2SK3857TV: Features: • Application for Ultra-compact ECMSpecifications Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25) PD 100 ...
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Characteristic | Symbol | Rating | Unit |
Gate-Drain voltage | VGDO | -20 | V |
Gate Current | IG | 10 | mA |
Drain power dissipation (Ta = 25) | PD | 100 | mW |
Junction Temperature | Tj | 125 | |
Storage temperature range | Tstg | −55~125 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,etc).