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2SK3857TK

Features: • Application for Ultra-compact ECMSpecifications Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25) PD 100 mW Junction Temperature Tj 125 Storage temperature range Tstg −55~125 Note: Using continuo...

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SeekIC No. : 004226919 Detail

2SK3857TK: Features: • Application for Ultra-compact ECMSpecifications Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25) PD 100 ...

2SK3857TK Data Sheet

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Part Number:
2SK3857TK
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Application for Ultra-compact ECM




Specifications

Characteristic Symbol Rating Unit
Gate-Drain voltage VGDO -20 V
Gate Current IG 10 mA
Drain power dissipation (Ta = 25) PD 100 mW
Junction Temperature Tj 125
Storage temperature range Tstg −55~125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,etc).






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