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2SK3847

Features: Application􀁺` Low drain−source ON resistance : RDS (ON) = 12 m (typ.)􀁺` High forward transfer admittance : |Yfs| = 36 S (typ.)􀁺` Low leakage current : IDSS = 100 A (max) (VDS = 40 V)􀁺` Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)...

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SeekIC No. : 004226916 Detail

2SK3847: Features: Application􀁺` Low drain−source ON resistance : RDS (ON) = 12 m (typ.)􀁺` High forward transfer admittance : |Yfs| = 36 S (typ.)􀁺` Low leakage current : IDSS...

2SK3847 Data Sheet

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Part Number:
2SK3847
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Application

􀁺` Low drain−source ON resistance : RDS (ON) = 12 m (typ.)
􀁺` High forward transfer admittance : |Yfs| = 36 S (typ.)
􀁺` Low leakage current : IDSS = 100 A (max) (VDS = 40 V)
􀁺` Enhancement mode : Vth = 1.5 to 2.5 V
                                          (VDS = 10 V, ID = 1 mA)


Specifications

Characteristic Symbol Rating Unit
Drainsource voltage VDSS 40 V
Draingate voltage (RGS = 20 k) VDGR 40 V
Gatesource voltage VGSS ±20 V
Drain current DC (Note 1) ID 32 A
Pulse (Note 1) IDP 96 A
Drain power dissipation (Tc = 25) PD 30 W
Single-pulse avalanche energy
(Note 2)		 EAS 47 mJ
Avalanche current IAR 32 A
Repetitive avalanche energy (Note 3) EAR 3 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150





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