2SK3826

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 100V
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Mounting Type: Through Hole
Package / Case: TO-220-3
Current - Continuous Drain (Id) @ 25° C: 26A
Packaging: Bulk
Power - Max: 1.75W
Supplier Device Package: TO-220
Manufacturer: ON Semiconductor
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Input Capacitance (Ciss) @ Vds: 2150pF @ 20V
Rds On (Max) @ Id, Vgs: 60 mOhm @ 13A, 10V


Pinout






Specifications

Absolute maximum ratings
VDSS [V]	100
VGSS [V]	20
ID [A]	26
PD [W]	45 Tc=25°C

Electrical characteristics
RDS(on) typ [] VGS=10V ID [A]=13	0.046
RDS(on) typ [] VGS=4V ID [A]=13	0.057
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	19
Ciss typ [pF]	2150
Qg typ [nC]	42

Description

The 2SK3826 is a kind of product with general-Purpose Switching Device Applications. it has 5 features: 1. Low ON-resistance; 2.4V drive; 3.Ultrahigh-speed switching; 4.Motor drive, DC / DC converter; 5.Avalanche resistance guarantee.
Here are some Absolute Maximum Ratings of the 2SK3826 when Ta = 25°C: 1. Drain-to-Source Voltage is 100 V; 2.Gate-to-Source Voltage is ±20 V; 3.Drain Current (DC) is 26 A; 4.when PW10ms, duty cycle1%, Drain Current (Pulse) is 104A; 5.Allowable Power Dissipation is 1.75W, when Tc=25°C, it is 45W; 6.Channel Temperature is 150°C; 7.Storage Temperature is from -55 to +150 °C; 8.Avalanche Energy (Single Pulse) is 80mJ; 9.Avalanche Current is 26A.
When Ta = 25°C, the Electrical Characteristics of 2SK3826 are as following mentioned:1.when ID=1mA, VGS=0, Drain-to-Source Breakdown Voltage is at least 100V; 2. when VDS=100V, VGS=0, Zero-Gate Voltage Drain Current is at most 1A; 3.when VGS= ±16V, VDS=0, Gate-to-Source Leakage Current is ±10 A; 4.when VDS=10V, ID=1mA, Cutoff Voltage is from 1.2 to 2.6V; 5. when VDS=10V, ID=13A, Forward Transfer Admittance is 11 to 19S; 6.when ID=13A, VGS=10V, Static Drain-to-Source On-State Resistance is 40 to 60 m, when ID=13A, VGS=4V, Static Drain-to-Source On-State Resistance is 57 to 80 m.