2SK3823

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 40A
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 1.75W
Supplier Device Package: TO-220
Manufacturer: ON Semiconductor
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Input Capacitance (Ciss) @ Vds: 1780pF @ 20V
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 20A, 10V


Pinout




Specifications

Absolute maximum ratings
VDSS [V]	60
VGSS [V]	20
ID [A]	40
PD [W]	45 Tc=25°C

Electrical characteristics
RDS(on) typ [Ω] VGS=10V ID [A]=20	0.021
RDS(on) typ [Ω] VGS=4V ID [A]=20	0.029
VGS(off) min [V]	1.2
VGS(off) max [V]	2.6
|yfs| typ [S]	28
Ciss typ [pF]	1780
Qg typ [nC]	40