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2SK3814

Features: • Super low on-state resistanceRDS(on)1 = 8.7 m MAX. (VGS = 10 V, ID = 30 A)RDS(on)2 = 10.5 m MAX. (VGS = 4.5 V, ID = 30 A)• Low C iss: C iss = 5450 pF TYP.Specifications Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC) (TC = 25)Drain ...

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SeekIC No. : 004226895 Detail

2SK3814: Features: • Super low on-state resistanceRDS(on)1 = 8.7 m MAX. (VGS = 10 V, ID = 30 A)RDS(on)2 = 10.5 m MAX. (VGS = 4.5 V, ID = 30 A)• Low C iss: C iss = 5450 pF TYP.Specifications Dra...

2SK3814 Data Sheet

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Part Number:
2SK3814
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Super low on-state resistance
RDS(on)1 = 8.7 m MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 10.5 m MAX. (VGS = 4.5 V, ID = 30 A)
• Low C iss: C iss = 5450 pF TYP.




Specifications

Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25)
Total Power Dissipation (TA = 25)
Channel Temperature
Storage Temperature
Single Avalanche Energy Note2
Repetitive Avalanche Current Note3
Repetitive Avalanche Energy Note3		 VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
EAS
IAR
EAR		 60
±20
±60
±240
84
1.0
150
-55 to +150
102
32
102		 V
V
A
A
W
W


mJ
A
mJ
Notes 1. PW 10 s, Duty Cycle 1%
2. Starting Tch = 25, VDD = 20 V, RG = 25 , VGS = 20 0 V, L = 100 H
3. Tch(peak) 150, RG = 25




Description

The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications.




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