Features: Application• Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)• High forward transfer admittance: |Yfs| = 2.8 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 720 V)• Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics ...
2SK3798: Features: Application• Low drain-source ON resistance: RDS (ON) = 2.5 (typ.)• High forward transfer admittance: |Yfs| = 2.8 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 720 V...
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Characteristics |
Symbol |
Ratings |
Unit | |
Drain-source voltage |
VDSS |
900 |
V | |
Drain-gate voltage (RGS=20k) |
VDGR |
900 |
V | |
Gate?source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note1) |
ID |
4 |
A |
Pulse (t = 1 ms) (Note1) |
IDP |
12 | ||
Drain power dissipation (Tc=25) |
PD |
40 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
345 |
mJ | |
Avalanche current |
IAR |
4 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
4.0 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
Tstg |
-55 ~ +150 |