Features: Application• Low drain-source ON resistance: RDS (ON) = 0.32 (typ.)• High forward transfer admittance: |Yfs| = 7.5 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 V)• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)Specifications Characteristics...
2SK3797: Features: Application• Low drain-source ON resistance: RDS (ON) = 0.32 (typ.)• High forward transfer admittance: |Yfs| = 7.5 S (typ.)• Low leakage current: IDSS = 100 A (VDS = 600 ...
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Characteristics |
Symbol |
Ratings |
Unit | |
Drain-source voltage |
VDSS |
600 |
V | |
Drain-gate voltage (RGS=20k) |
VDGR |
600 |
V | |
Gate?source voltage |
VGSS |
±30 |
V | |
Drain current | DC (Note1) |
ID |
13 |
A |
Pulse (t = 1 ms) (Note1) |
IDP |
52 | ||
Drain power dissipation (Tc=25) |
PD |
50 |
W | |
Single pulse avalanche energy (Note 2) |
EAS |
1033 |
mJ | |
Avalanche current |
IAR |
13 |
A | |
Repetitive avalanche energy (Note 3) |
EAR |
5.0 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
Tstg |
-55 ~ +150 |